PSMN035-100LS. Аналоги и основные параметры

Наименование производителя: PSMN035-100LS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 65 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 27 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm

Тип корпуса: QFN3333

Аналог (замена) для PSMN035-100LS

- подборⓘ MOSFET транзистора по параметрам

 

PSMN035-100LS даташит

 ..1. Size:387K  philips
 psmn035-100ls.pdf pdf_icon

PSMN035-100LS

PSMN035-100LS N-channel QFN3333 100 V 32m standard level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High effic

 5.1. Size:152K  philips
 psmn035-150 series hg 3.pdf pdf_icon

PSMN035-100LS

DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN035-150B; PSMN035-150P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low therma

 5.2. Size:895K  cn vbsemi
 psmn035-150.pdf pdf_icon

PSMN035-100LS

PSMN035-150 www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 150 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.075 100 % Rg and UIS tested ID (A) 20 Configuration Single Package TO-220 TO-220AB D G S S N-Channel MOSFET D G Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n

 7.1. Size:297K  philips
 psmn035 150 series.pdf pdf_icon

PSMN035-100LS

PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Rev. 04 22 February 2001 Product specification 1. Description SiliconMAX 1 products use the latest TrenchMOS 2 technology to achieve the lowest possible on-state resistance for each package. Product availability PSMN035-150P in SOT78 (TO-220AB) PSMN035-150B in SOT404 (D2-PAK). 2. Features Fast swi

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Другие IGBT... PSMN025-100D, PSMN026-80YS, PSMN027-100PS, PSMN028-100YS, PSMN030-150B, PSMN030-150P, PSMN030-60YS, PSMN034-100PS, IRFP460, PSMN035-150B, PSMN035-150P, PSMN038-100K, PSMN039-100YS, PSMN045-80YS, PSMN050-80PS, PSMN057-200B, PSMN057-200P