PSMN050-80PS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN050-80PS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm

Encapsulados: TO220AB

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PSMN050-80PS datasheet

 ..1. Size:217K  philips
psmn050-80ps.pdf pdf_icon

PSMN050-80PS

PSMN050-80PS N-channel 80 V 50 m standard level MOSFET Rev. 01 10 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low

 4.1. Size:230K  nxp
psmn050-80bs.pdf pdf_icon

PSMN050-80PS

PSMN050-80BS N-channel 80 V 46 m standard level MOSFET in D2PAK Rev. 1 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

 8.1. Size:196K  philips
psmn059-150y.pdf pdf_icon

PSMN050-80PS

PSMN059-150Y N-channel TrenchMOS SiliconMAX standard level FET Rev. 03 17 March 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial appl

 8.2. Size:172K  philips
psmn057-200p.pdf pdf_icon

PSMN050-80PS

PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 4 January 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

Otros transistores... PSMN030-60YS, PSMN034-100PS, PSMN035-100LS, PSMN035-150B, PSMN035-150P, PSMN038-100K, PSMN039-100YS, PSMN045-80YS, IRF640N, PSMN057-200B, PSMN057-200P, PSMN059-150Y, PSMN063-150D, PSMN069-100YS, PSMN070-200B, PSMN070-200P, PSMN085-150K