PSMN050-80PS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN050-80PS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 56 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
Tjⓘ - Максимальная температура канала: 175 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.046 Ohm
Тип корпуса: TO220AB
Аналог (замена) для PSMN050-80PS
PSMN050-80PS Datasheet (PDF)
psmn050-80ps.pdf
PSMN050-80PSN-channel 80 V 50 m standard level MOSFETRev. 01 10 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low
psmn050-80bs.pdf
PSMN050-80BSN-channel 80 V 46 m standard level MOSFET in D2PAKRev. 1 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
psmn059-150y.pdf
PSMN059-150YN-channel TrenchMOS SiliconMAX standard level FETRev. 03 17 March 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial appl
psmn057-200p.pdf
PSMN057-200PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 4 January 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app
psmn059-150y.pdf
PSMN059-150YN-channel TrenchMOS SiliconMAX standard level FET3 October 2013 Product data sheet1. General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) ina plastic package using TrenchMOS technology. This product is designed and qualifiedfor use in computing, communications, consumer and industrial applications only.2. Features and be
psmn057-200b.pdf
PSMN057-200BN-channel TrenchMOS SiliconMAX standard level FET15 August 2013 Product data sheet1. General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) ina plastic package using TrenchMOS technology. This product is designed and qualifiedfor use in computing, communications, consumer and industrial applications only.2. Features and be
psmn057-200p.pdf
PSMN057-200PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 4 January 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F