PSMN057-200P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN057-200P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 39 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.057 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de PSMN057-200P MOSFET
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PSMN057-200P datasheet
psmn057-200p.pdf
PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 4 January 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app
psmn057-200p.pdf
PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 4 January 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app
psmn057-200b.pdf
PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET 15 August 2013 Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and be
psmn050-80ps.pdf
PSMN050-80PS N-channel 80 V 50 m standard level MOSFET Rev. 01 10 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low
Otros transistores... PSMN035-100LS, PSMN035-150B, PSMN035-150P, PSMN038-100K, PSMN039-100YS, PSMN045-80YS, PSMN050-80PS, PSMN057-200B, AO3400, PSMN059-150Y, PSMN063-150D, PSMN069-100YS, PSMN070-200B, PSMN070-200P, PSMN085-150K, PSMN0R9-25YLC, PSMN102-200Y
History: RFG50N06LE | TMU8N60AZ | TMU7N65Z | RQ6E035AT | RFG40N10LE | AP9992GR-HF | RS1E200AH
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