PSMN057-200P Todos los transistores

 

PSMN057-200P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN057-200P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 39 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.057 Ohm
   Paquete / Cubierta: TO220AB
 

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PSMN057-200P Datasheet (PDF)

 ..1. Size:172K  philips
psmn057-200p.pdf pdf_icon

PSMN057-200P

PSMN057-200PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 4 January 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

 ..2. Size:817K  nxp
psmn057-200p.pdf pdf_icon

PSMN057-200P

PSMN057-200PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 4 January 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

 3.1. Size:232K  nxp
psmn057-200b.pdf pdf_icon

PSMN057-200P

PSMN057-200BN-channel TrenchMOS SiliconMAX standard level FET15 August 2013 Product data sheet1. General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) ina plastic package using TrenchMOS technology. This product is designed and qualifiedfor use in computing, communications, consumer and industrial applications only.2. Features and be

 8.1. Size:217K  philips
psmn050-80ps.pdf pdf_icon

PSMN057-200P

PSMN050-80PSN-channel 80 V 50 m standard level MOSFETRev. 01 10 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low

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History: FQU2N100TU | BUK625R0-40C

 

 
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