PSMN057-200P. Аналоги и основные параметры
Наименование производителя: PSMN057-200P
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 39 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.057 Ohm
Тип корпуса: TO220AB
Аналог (замена) для PSMN057-200P
- подборⓘ MOSFET транзистора по параметрам
PSMN057-200P даташит
psmn057-200p.pdf
PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 4 January 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app
psmn057-200p.pdf
PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 4 January 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app
psmn057-200b.pdf
PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET 15 August 2013 Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and be
psmn050-80ps.pdf
PSMN050-80PS N-channel 80 V 50 m standard level MOSFET Rev. 01 10 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low
Другие IGBT... PSMN035-100LS, PSMN035-150B, PSMN035-150P, PSMN038-100K, PSMN039-100YS, PSMN045-80YS, PSMN050-80PS, PSMN057-200B, AO3400, PSMN059-150Y, PSMN063-150D, PSMN069-100YS, PSMN070-200B, PSMN070-200P, PSMN085-150K, PSMN0R9-25YLC, PSMN102-200Y
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