PSMN059-150Y MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN059-150Y
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 113 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 43 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.059 Ohm
Paquete / Cubierta: LFPAK
Búsqueda de reemplazo de PSMN059-150Y MOSFET
PSMN059-150Y Datasheet (PDF)
psmn059-150y.pdf

PSMN059-150YN-channel TrenchMOS SiliconMAX standard level FETRev. 03 17 March 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial appl
psmn059-150y.pdf

PSMN059-150YN-channel TrenchMOS SiliconMAX standard level FET3 October 2013 Product data sheet1. General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) ina plastic package using TrenchMOS technology. This product is designed and qualifiedfor use in computing, communications, consumer and industrial applications only.2. Features and be
psmn050-80ps.pdf

PSMN050-80PSN-channel 80 V 50 m standard level MOSFETRev. 01 10 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low
psmn057-200p.pdf

PSMN057-200PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 4 January 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app
Otros transistores... PSMN035-150B , PSMN035-150P , PSMN038-100K , PSMN039-100YS , PSMN045-80YS , PSMN050-80PS , PSMN057-200B , PSMN057-200P , AON6414A , PSMN063-150D , PSMN069-100YS , PSMN070-200B , PSMN070-200P , PSMN085-150K , PSMN0R9-25YLC , PSMN102-200Y , PSMN130-200D .
History: CHM4435AJGP | CHM4435BJGP | HUFA75637S3ST | AP9971AGJ-HF | IXTA300N04T2
History: CHM4435AJGP | CHM4435BJGP | HUFA75637S3ST | AP9971AGJ-HF | IXTA300N04T2



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
c102 transistor | bt152 datasheet | 2sa1302 datasheet | mpsa13 transistor equivalent | кт817г характеристики | 2sc1972 | 2n5088 transistor equivalent | 2n5884