All MOSFET. PSMN059-150Y Datasheet

 

PSMN059-150Y Datasheet and Replacement


   Type Designator: PSMN059-150Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 113 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 43 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
   Package: LFPAK
 

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PSMN059-150Y Datasheet (PDF)

 ..1. Size:196K  philips
psmn059-150y.pdf pdf_icon

PSMN059-150Y

PSMN059-150YN-channel TrenchMOS SiliconMAX standard level FETRev. 03 17 March 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial appl

 ..2. Size:717K  nxp
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PSMN059-150Y

PSMN059-150YN-channel TrenchMOS SiliconMAX standard level FET3 October 2013 Product data sheet1. General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) ina plastic package using TrenchMOS technology. This product is designed and qualifiedfor use in computing, communications, consumer and industrial applications only.2. Features and be

 8.1. Size:217K  philips
psmn050-80ps.pdf pdf_icon

PSMN059-150Y

PSMN050-80PSN-channel 80 V 50 m standard level MOSFETRev. 01 10 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low

 8.2. Size:172K  philips
psmn057-200p.pdf pdf_icon

PSMN059-150Y

PSMN057-200PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 4 January 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

Datasheet: PSMN035-150B , PSMN035-150P , PSMN038-100K , PSMN039-100YS , PSMN045-80YS , PSMN050-80PS , PSMN057-200B , PSMN057-200P , AON6414A , PSMN063-150D , PSMN069-100YS , PSMN070-200B , PSMN070-200P , PSMN085-150K , PSMN0R9-25YLC , PSMN102-200Y , PSMN130-200D .

History: SVG042R5NL5 | BUK7640-100A | STW21N65M5 | 2SK3009P | APM4461 | STW21NM60ND | BUK7635-55A

Keywords - PSMN059-150Y MOSFET datasheet

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