PSMN059-150Y Specs and Replacement
Type Designator: PSMN059-150Y
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 113 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 43 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
Package: LFPAK
PSMN059-150Y substitution
- MOSFET ⓘ Cross-Reference Search
PSMN059-150Y datasheet
psmn059-150y.pdf
PSMN059-150Y N-channel TrenchMOS SiliconMAX standard level FET Rev. 03 17 March 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial appl... See More ⇒
psmn059-150y.pdf
PSMN059-150Y N-channel TrenchMOS SiliconMAX standard level FET 3 October 2013 Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and be... See More ⇒
psmn050-80ps.pdf
PSMN050-80PS N-channel 80 V 50 m standard level MOSFET Rev. 01 10 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low... See More ⇒
psmn057-200p.pdf
PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 4 January 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app... See More ⇒
Detailed specifications: PSMN035-150B, PSMN035-150P, PSMN038-100K, PSMN039-100YS, PSMN045-80YS, PSMN050-80PS, PSMN057-200B, PSMN057-200P, IRFB4227, PSMN063-150D, PSMN069-100YS, PSMN070-200B, PSMN070-200P, PSMN085-150K, PSMN0R9-25YLC, PSMN102-200Y, PSMN130-200D
Keywords - PSMN059-150Y MOSFET specs
PSMN059-150Y cross reference
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PSMN059-150Y replacement
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History: SM2F04NSU | SPC6602
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