PSMN0R9-25YLC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN0R9-25YLC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 272 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00099 Ohm

Encapsulados: LFPAK

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PSMN0R9-25YLC datasheet

 ..1. Size:300K  philips
 psmn0r9-25ylc.pdf pdf_icon

PSMN0R9-25YLC

PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 ..2. Size:911K  nxp
 psmn0r9-25ylc.pdf pdf_icon

PSMN0R9-25YLC

PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 2.1. Size:726K  nxp
 psmn0r9-25yld.pdf pdf_icon

PSMN0R9-25YLC

PSMN0R9-25YLD N-channel 25 V, 0.85 m , 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 27 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated w

 6.1. Size:263K  nxp
 psmn0r9-30uld.pdf pdf_icon

PSMN0R9-25YLC

PSMN0R9-30ULD N-channel 30 V, 0.87 m , 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio util

MOSTRAR MÁS

Otros transistores... PSMN057-200B, PSMN057-200P, PSMN059-150Y, PSMN063-150D, PSMN069-100YS, PSMN070-200B, PSMN070-200P, PSMN085-150K, P55NF06, PSMN102-200Y, PSMN130-200D, PSMN165-200K, PSMN1R0-30YLC, PSMN1R1-25YLC, PSMN1R1-30EL, PSMN1R1-30PL, PSMN1R2-25YL