PSMN0R9-25YLC. Аналоги и основные параметры

Наименование производителя: PSMN0R9-25YLC

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 272 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.00099 Ohm

Тип корпуса: LFPAK

Аналог (замена) для PSMN0R9-25YLC

- подборⓘ MOSFET транзистора по параметрам

 

PSMN0R9-25YLC даташит

 ..1. Size:300K  philips
 psmn0r9-25ylc.pdf pdf_icon

PSMN0R9-25YLC

PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 ..2. Size:911K  nxp
 psmn0r9-25ylc.pdf pdf_icon

PSMN0R9-25YLC

PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 2.1. Size:726K  nxp
 psmn0r9-25yld.pdf pdf_icon

PSMN0R9-25YLC

PSMN0R9-25YLD N-channel 25 V, 0.85 m , 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 27 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated w

 6.1. Size:263K  nxp
 psmn0r9-30uld.pdf pdf_icon

PSMN0R9-25YLC

PSMN0R9-30ULD N-channel 30 V, 0.87 m , 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio util

ПОКАЗАТЬ ЕЩЁ

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