PSMN1R1-30EL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN1R1-30EL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 338 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 243 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm
   Paquete / Cubierta: I2PAK

Búsqueda de reemplazo de MOSFET PSMN1R1-30EL

PSMN1R1-30EL Datasheet (PDF)

..1. Size:238K philips
psmn1r1-30el.pdf

PSMN1R1-30ELN-channel 30 V 1.3 m logic level MOSFET in I2PAKRev. 2 15 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to

..2. Size:738K nxp
psmn1r1-30el.pdf

PSMN1R1-30ELN-channel 30 V 1.3 m logic level MOSFET in I2PAK2 April 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction los

4.1. Size:246K philips
psmn1r1-30pl.pdf

PSMN1R1-30PLN-channel 30 V 1.3 m logic level MOSFET in TO-220Rev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

4.2. Size:743K nxp
psmn1r1-30pl.pdf

PSMN1R1-30PLN-channel 30 V 1.3 m logic level MOSFET in TO-2202 April 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction l

6.1. Size:384K philips
psmn1r1-25ylc.pdf

PSMN1R1-25YLCN-channel 25 V 1.15 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

6.2. Size:222K nxp
psmn1r1-40bs.pdf

PSMN1R1-40BSN-channel 40 V 1.3 m standard level MOSFET in D2PAKRev. 2 29 February 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits H

6.3. Size:968K nxp
psmn1r1-25ylc.pdf