PSMN1R1-30EL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN1R1-30EL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 338 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm

Encapsulados: I2PAK

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PSMN1R1-30EL datasheet

 ..1. Size:238K  philips
psmn1r1-30el.pdf pdf_icon

PSMN1R1-30EL

PSMN1R1-30EL N-channel 30 V 1.3 m logic level MOSFET in I2PAK Rev. 2 15 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to

 ..2. Size:738K  nxp
psmn1r1-30el.pdf pdf_icon

PSMN1R1-30EL

PSMN1R1-30EL N-channel 30 V 1.3 m logic level MOSFET in I2PAK 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction los

 4.1. Size:246K  philips
psmn1r1-30pl.pdf pdf_icon

PSMN1R1-30EL

PSMN1R1-30PL N-channel 30 V 1.3 m logic level MOSFET in TO-220 Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 4.2. Size:743K  nxp
psmn1r1-30pl.pdf pdf_icon

PSMN1R1-30EL

PSMN1R1-30PL N-channel 30 V 1.3 m logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction l

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