PSMN1R1-30EL - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN1R1-30EL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 338 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0013 Ohm
Тип корпуса: I2PAK
Аналог (замена) для PSMN1R1-30EL
PSMN1R1-30EL Datasheet (PDF)
psmn1r1-30el.pdf

PSMN1R1-30ELN-channel 30 V 1.3 m logic level MOSFET in I2PAKRev. 2 15 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to
psmn1r1-30el.pdf

PSMN1R1-30ELN-channel 30 V 1.3 m logic level MOSFET in I2PAK2 April 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction los
psmn1r1-30pl.pdf

PSMN1R1-30PLN-channel 30 V 1.3 m logic level MOSFET in TO-220Rev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
psmn1r1-30pl.pdf

PSMN1R1-30PLN-channel 30 V 1.3 m logic level MOSFET in TO-2202 April 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction l
Другие MOSFET... PSMN070-200P , PSMN085-150K , PSMN0R9-25YLC , PSMN102-200Y , PSMN130-200D , PSMN165-200K , PSMN1R0-30YLC , PSMN1R1-25YLC , 2N7000 , PSMN1R1-30PL , PSMN1R2-25YL , PSMN1R2-25YLC , PSMN1R2-30YLC , PSMN1R3-30YL , PSMN1R5-25YL , PSMN1R5-30YL , PSMN1R5-30YLC .
History: PSMN1R1-30PL | FDD5810-F085 | FDD6N50TM-F085 | SVG108R5NAD | SVG108R5NAMQ | HM4885 | NCE70N290D
History: PSMN1R1-30PL | FDD5810-F085 | FDD6N50TM-F085 | SVG108R5NAD | SVG108R5NAMQ | HM4885 | NCE70N290D



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