PSMN1R1-30EL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PSMN1R1-30EL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 338 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tjⓘ - Максимальная температура канала: 175 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0013 Ohm
Тип корпуса: I2PAK
- подбор MOSFET транзистора по параметрам
PSMN1R1-30EL Datasheet (PDF)
psmn1r1-30el.pdf

PSMN1R1-30ELN-channel 30 V 1.3 m logic level MOSFET in I2PAKRev. 2 15 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to
psmn1r1-30el.pdf

PSMN1R1-30ELN-channel 30 V 1.3 m logic level MOSFET in I2PAK2 April 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction los
psmn1r1-30pl.pdf

PSMN1R1-30PLN-channel 30 V 1.3 m logic level MOSFET in TO-220Rev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
psmn1r1-30pl.pdf

PSMN1R1-30PLN-channel 30 V 1.3 m logic level MOSFET in TO-2202 April 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction l
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: RJK1555DPA | SSF2300B | HGB035N10A | WST2N7002A | BUK9M120-100E | FDMB3800N | IRLI620A
History: RJK1555DPA | SSF2300B | HGB035N10A | WST2N7002A | BUK9M120-100E | FDMB3800N | IRLI620A



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