PSMN1R1-30PL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN1R1-30PL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 338 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de PSMN1R1-30PL MOSFET
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PSMN1R1-30PL datasheet
psmn1r1-30pl.pdf
PSMN1R1-30PL N-channel 30 V 1.3 m logic level MOSFET in TO-220 Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
psmn1r1-30pl.pdf
PSMN1R1-30PL N-channel 30 V 1.3 m logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction l
psmn1r1-30el.pdf
PSMN1R1-30EL N-channel 30 V 1.3 m logic level MOSFET in I2PAK Rev. 2 15 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to
psmn1r1-30el.pdf
PSMN1R1-30EL N-channel 30 V 1.3 m logic level MOSFET in I2PAK 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction los
Otros transistores... PSMN085-150K, PSMN0R9-25YLC, PSMN102-200Y, PSMN130-200D, PSMN165-200K, PSMN1R0-30YLC, PSMN1R1-25YLC, PSMN1R1-30EL, 2SK3878, PSMN1R2-25YL, PSMN1R2-25YLC, PSMN1R2-30YLC, PSMN1R3-30YL, PSMN1R5-25YL, PSMN1R5-30YL, PSMN1R5-30YLC, PSMN1R5-40ES
History: NVD5C446N | IRF634SPBF | RQ5E035BN | HCCZ120R040H1 | FMP06N60ES | AP9980GH | NCE70N380
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