PSMN1R1-30PL
MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN1R1-30PL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 338
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 243
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0013
Ohm
Package:
TO220AB
PSMN1R1-30PL
Datasheet (PDF)
..1. Size:246K philips
psmn1r1-30pl.pdf 
PSMN1R1-30PLN-channel 30 V 1.3 m logic level MOSFET in TO-220Rev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
..2. Size:743K nxp
psmn1r1-30pl.pdf
PSMN1R1-30PLN-channel 30 V 1.3 m logic level MOSFET in TO-2202 April 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction l
4.1. Size:238K philips
psmn1r1-30el.pdf
PSMN1R1-30ELN-channel 30 V 1.3 m logic level MOSFET in I2PAKRev. 2 15 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to
4.2. Size:738K nxp
psmn1r1-30el.pdf
PSMN1R1-30ELN-channel 30 V 1.3 m logic level MOSFET in I2PAK2 April 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction los
6.1. Size:384K philips
psmn1r1-25ylc.pdf
PSMN1R1-25YLCN-channel 25 V 1.15 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
6.2. Size:222K nxp
psmn1r1-40bs.pdf
PSMN1R1-40BSN-channel 40 V 1.3 m standard level MOSFET in D2PAKRev. 2 29 February 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits H
6.3. Size:968K nxp
psmn1r1-25ylc.pdf
PSMN1R1-25YLCN-channel 25 V 1.15 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
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