PSMN1R2-25YL Todos los transistores

 

PSMN1R2-25YL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN1R2-25YL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 121 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0012 Ohm
   Paquete / Cubierta: LFPAK
 

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PSMN1R2-25YL Datasheet (PDF)

 ..1. Size:212K  philips
psmn1r2-25yl.pdf pdf_icon

PSMN1R2-25YL

PSMN1R2-25YLN-channel 25 V 1.2 m logic level MOSFET in LFPAKRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS pro

 ..2. Size:719K  nxp
psmn1r2-25yl.pdf pdf_icon

PSMN1R2-25YL

PSMN1R2-25YLN-channel 25 V 1.2 m logic level MOSFET in LFPAKRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS pro

 0.1. Size:341K  philips
psmn1r2-25ylc.pdf pdf_icon

PSMN1R2-25YL

PSMN1R2-25YLCN-channel 25 V 1.3 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 0.2. Size:729K  nxp
psmn1r2-25yld.pdf pdf_icon

PSMN1R2-25YL

PSMN1R2-25YLDN-channel 25 V, 1.2 m, 230 A logic level MOSFET inLFPAK56 using NextPowerS3 Technology19 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated wi

Otros transistores... PSMN0R9-25YLC , PSMN102-200Y , PSMN130-200D , PSMN165-200K , PSMN1R0-30YLC , PSMN1R1-25YLC , PSMN1R1-30EL , PSMN1R1-30PL , 12N60 , PSMN1R2-25YLC , PSMN1R2-30YLC , PSMN1R3-30YL , PSMN1R5-25YL , PSMN1R5-30YL , PSMN1R5-30YLC , PSMN1R5-40ES , PSMN1R5-40PS .

 

 
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