PSMN1R2-25YL - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN1R2-25YL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 121 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 150 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0012 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PSMN1R2-25YL
PSMN1R2-25YL Datasheet (PDF)
psmn1r2-25yl.pdf

PSMN1R2-25YLN-channel 25 V 1.2 m logic level MOSFET in LFPAKRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS pro
psmn1r2-25yl.pdf

PSMN1R2-25YLN-channel 25 V 1.2 m logic level MOSFET in LFPAKRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS pro
psmn1r2-25ylc.pdf

PSMN1R2-25YLCN-channel 25 V 1.3 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn1r2-25yld.pdf

PSMN1R2-25YLDN-channel 25 V, 1.2 m, 230 A logic level MOSFET inLFPAK56 using NextPowerS3 Technology19 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated wi
Другие MOSFET... PSMN0R9-25YLC , PSMN102-200Y , PSMN130-200D , PSMN165-200K , PSMN1R0-30YLC , PSMN1R1-25YLC , PSMN1R1-30EL , PSMN1R1-30PL , SKD502T , PSMN1R2-25YLC , PSMN1R2-30YLC , PSMN1R3-30YL , PSMN1R5-25YL , PSMN1R5-30YL , PSMN1R5-30YLC , PSMN1R5-40ES , PSMN1R5-40PS .
History: P50N03LTG | GSM3993 | 12N70KL-TN3-R | SVS11N70SD2
History: P50N03LTG | GSM3993 | 12N70KL-TN3-R | SVS11N70SD2



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