PSMN1R2-25YL. Аналоги и основные параметры

Наименование производителя: PSMN1R2-25YL

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 121 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0012 Ohm

Тип корпуса: LFPAK

Аналог (замена) для PSMN1R2-25YL

- подборⓘ MOSFET транзистора по параметрам

 

PSMN1R2-25YL даташит

 ..1. Size:212K  philips
psmn1r2-25yl.pdfpdf_icon

PSMN1R2-25YL

PSMN1R2-25YL N-channel 25 V 1.2 m logic level MOSFET in LFPAK Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pro

 ..2. Size:719K  nxp
psmn1r2-25yl.pdfpdf_icon

PSMN1R2-25YL

PSMN1R2-25YL N-channel 25 V 1.2 m logic level MOSFET in LFPAK Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pro

 0.1. Size:341K  philips
psmn1r2-25ylc.pdfpdf_icon

PSMN1R2-25YL

PSMN1R2-25YLC N-channel 25 V 1.3 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 0.2. Size:729K  nxp
psmn1r2-25yld.pdfpdf_icon

PSMN1R2-25YL

PSMN1R2-25YLD N-channel 25 V, 1.2 m , 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated wi

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