PSMN1R5-30YLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN1R5-30YLC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 179 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00155 Ohm
Paquete / Cubierta: LFPAK

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PSMN1R5-30YLC Datasheet (PDF)

..1. Size:346K philips
psmn1r5-30ylc.pdf

PSMN1R5-30YLCN-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technologyRev. 2 17 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

..2. Size:930K nxp
psmn1r5-30ylc.pdf

2.1. Size:400K philips
psmn1r5-30yl.pdf

PSMN1R5-30YLN-channel 30 V 1.5 m logic level MOSFET in LFPAKRev. 01 9 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

2.2. Size:978K nxp
psmn1r5-30yl.pdf

4.1. Size:221K nxp
psmn1r5-30ble.pdf

PSMN1R5-30BLEN-channel 30 V 1.5 m logic level MOSFET in D2PAK12 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits Enhanced forward biased safe

4.2. Size:254K inchange semiconductor
psmn1r5-30ble.pdf

isc N-Channel MOSFET Transistor PSMN1R5-30BLEFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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