PSMN1R5-30YLC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN1R5-30YLC
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 179 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1.95 V
Максимально допустимый постоянный ток стока |Id|: 100 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 65 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.00155 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PSMN1R5-30YLC
PSMN1R5-30YLC Datasheet (PDF)
psmn1r5-30ylc.pdf
PSMN1R5-30YLCN-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technologyRev. 2 17 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn1r5-30ylc.pdf
PSMN1R5-30YLCN-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technologyRev. 2 17 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn1r5-30yl.pdf
PSMN1R5-30YLN-channel 30 V 1.5 m logic level MOSFET in LFPAKRev. 01 9 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
psmn1r5-30yl.pdf
PSMN1R5-30YLN-channel 30 V 1.5 m logic level MOSFET in LFPAKRev. 01 9 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
psmn1r5-30ble.pdf
PSMN1R5-30BLEN-channel 30 V 1.5 m logic level MOSFET in D2PAK12 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits Enhanced forward biased safe
psmn1r5-30ble.pdf
isc N-Channel MOSFET Transistor PSMN1R5-30BLEFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
