PSMN1R5-30YLC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN1R5-30YLC
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 179 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 175 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00155 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PSMN1R5-30YLC
PSMN1R5-30YLC Datasheet (PDF)
psmn1r5-30ylc.pdf
PSMN1R5-30YLCN-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technologyRev. 2 17 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn1r5-30ylc.pdf
PSMN1R5-30YLCN-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technologyRev. 2 17 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn1r5-30yl.pdf
PSMN1R5-30YLN-channel 30 V 1.5 m logic level MOSFET in LFPAKRev. 01 9 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
psmn1r5-30yl.pdf
PSMN1R5-30YLN-channel 30 V 1.5 m logic level MOSFET in LFPAKRev. 01 9 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
psmn1r5-30ble.pdf
PSMN1R5-30BLEN-channel 30 V 1.5 m logic level MOSFET in D2PAK12 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits Enhanced forward biased safe
psmn1r5-30ble.pdf
isc N-Channel MOSFET Transistor PSMN1R5-30BLEFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918