PSMN1R5-40ES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN1R5-40ES
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 338 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.6 V
   Qgⓘ - Carga de la puerta: 136 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm
   Paquete / Cubierta: I2PAK

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PSMN1R5-40ES Datasheet (PDF)

..1. Size:227K philips
psmn1r5-40es.pdf

PSMN1R5-40ESN-channel 40 V 1.6 m standard level MOSFET in I2PAK.Rev. 01 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High

..2. Size:816K nxp
psmn1r5-40es.pdf

..3. Size:255K inchange semiconductor
psmn1r5-40es.pdf

isc N-Channel MOSFET Transistor PSMN1R5-40ESFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

4.1. Size:235K philips
psmn1r5-40ps.pdf

PSMN1R5-40PSN-channel 40 V 1.6 m standard level MOSFET in TO220.Rev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 (SOT78) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High e

4.2. Size:743K nxp
psmn1r5-40ps.pdf

PSMN1R5-40PSN-channel 40 V 1.6 m standard level MOSFET in TO22015 July 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in SOT78 (TO220) using TrenchMOS technology.Product design and manufacture has been optimized for use in battery operated powertools.2. Features and benefits High efficiency due to low switching and conduction losses Robus

4.3. Size:299K nxp
psmn1r5-40ysd.pdf

PSMN1R5-40YSDN-channel 40 V, 1.5 m, 240 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology27 August 2019 Product data sheet1. General description240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance

4.4. Size:261K inchange semiconductor
psmn1r5-40ps.pdf

isc N-Channel MOSFET Transistor PSMN1R5-40PSFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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