PSMN1R5-40ES MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN1R5-40ES
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 338 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 136 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0016 Ohm
Package: I2PAK
PSMN1R5-40ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN1R5-40ES Datasheet (PDF)
1.1. psmn1r5-40ps.pdf 
Size:235K _philips2
PSMN1R5-40PS N-channel 40 V 1.6 m? standard level MOSFET in TO220. Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 (SOT78) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc
1.2. psmn1r5-40es.pdf Size:227K _philips2
PSMN1R5-40ES N-channel 40 V 1.6 m? standard level MOSFET in I2PAK. Rev. 01 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien
2.1. psmn1r5-30ble.pdf Size:221K _update_mosfet
PSMN1R5-30BLE N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • Enhanced forward biased safe
2.2. psmn1r5-30yl.pdf Size:400K _philips2
PSMN1R5-30YL N-channel 30 V 1.5 m? logic level MOSFET in LFPAK Rev. 01 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ? Advanced TrenchMOS provides
2.3. psmn1r5-30ylc.pdf Size:346K _philips2
PSMN1R5-30YLC N-channel 30 V 1.55m? logic level MOSFET in LFPAK using NextPower technology Rev. 2 17 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High
2.4. psmn1r5-25yl.pdf Size:199K _philips2
PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency
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