All MOSFET. PSMN1R5-40ES Datasheet

 

PSMN1R5-40ES MOSFET. Datasheet pdf. Equivalent

Type Designator: PSMN1R5-40ES

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 338 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 136 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0016 Ohm

Package: I2PAK

PSMN1R5-40ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN1R5-40ES Datasheet (PDF)

1.1. psmn1r5-40ps.pdf Size:235K _philips2

PSMN1R5-40ES
PSMN1R5-40ES

PSMN1R5-40PS N-channel 40 V 1.6 m? standard level MOSFET in TO220. Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 (SOT78) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc

1.2. psmn1r5-40es.pdf Size:227K _philips2

PSMN1R5-40ES
PSMN1R5-40ES

PSMN1R5-40ES N-channel 40 V 1.6 m? standard level MOSFET in I2PAK. Rev. 01 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 2.1. psmn1r5-30ble.pdf Size:221K _update_mosfet

PSMN1R5-40ES
PSMN1R5-40ES

PSMN1R5-30BLE N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • Enhanced forward biased safe

2.2. psmn1r5-30yl.pdf Size:400K _philips2

PSMN1R5-40ES
PSMN1R5-40ES

PSMN1R5-30YL N-channel 30 V 1.5 m? logic level MOSFET in LFPAK Rev. 01 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ? Advanced TrenchMOS provides

 2.3. psmn1r5-30ylc.pdf Size:346K _philips2

PSMN1R5-40ES
PSMN1R5-40ES

PSMN1R5-30YLC N-channel 30 V 1.55m? logic level MOSFET in LFPAK using NextPower technology Rev. 2 17 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High

2.4. psmn1r5-25yl.pdf Size:199K _philips2

PSMN1R5-40ES
PSMN1R5-40ES

PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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