PSMN1R7-25YLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PSMN1R7-25YLCN-channel 25 V 1.9 m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

PSMN1R7-25YLDN-channel 25 V, 1.75 m, 170 A logic level MOSFET inLFPAK56 using NextPowerS3 Technology19 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated w

PSMN1R7-30YLN-channel 30 V 1.7 m logic level MOSFET in LFPAKRev. 1 30 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS p

PSMN1R7-30YLN-channel 30 V 1.7 m logic level MOSFET in LFPAKRev. 1 30 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS p

PSMN1R7-60BSN-channel 60 V 2 m standard level MOSFET in D2PAKRev. 2 29 February 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effic

PSMN1R7-40YLDN-channel 40 V, 1.8 m, 200 A logic level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology27 August 2019 Product data sheet1. General description200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 packageusing advanced TrenchMOS Superjunction technology. This product has been designed andqualified for high performance power

isc N-Channel MOSFET Transistor PSMN1R7-60BSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general