PSMN1R7-25YLC - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN1R7-25YLC
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 164 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0019 Ohm
Тип корпуса: LFPAK
PSMN1R7-25YLC Datasheet (PDF)
psmn1r7-25ylc.pdf

PSMN1R7-25YLCN-channel 25 V 1.9 m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn1r7-25yld.pdf

PSMN1R7-25YLDN-channel 25 V, 1.75 m, 170 A logic level MOSFET inLFPAK56 using NextPowerS3 Technology19 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated w
psmn1r7-30yl.pdf

PSMN1R7-30YLN-channel 30 V 1.7 m logic level MOSFET in LFPAKRev. 1 30 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS p
psmn1r7-30yl.pdf

PSMN1R7-30YLN-channel 30 V 1.7 m logic level MOSFET in LFPAKRev. 1 30 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS p
Другие MOSFET... PSMN1R2-30YLC , PSMN1R3-30YL , PSMN1R5-25YL , PSMN1R5-30YL , PSMN1R5-30YLC , PSMN1R5-40ES , PSMN1R5-40PS , PSMN1R6-30PL , IRF9540N , PSMN1R7-30YL , PSMN1R7-60BS , PSMN1R8-30PL , PSMN1R9-25YLC , PSMN2R0-30PL , PSMN2R0-30YL , PSMN2R0-60ES , PSMN2R0-60PS .
History: HM50P06 | 8N60P



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