PSMN1R9-25YLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN1R9-25YLC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 141 W
Voltaje máximo drenador - fuente |Vds|: 25 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.95 V
Carga de la puerta (Qg): 57 nC
Resistencia entre drenaje y fuente RDS(on): 0.00205 Ohm
Paquete / Cubierta: LFPAK
Búsqueda de reemplazo de MOSFET PSMN1R9-25YLC
PSMN1R9-25YLC Datasheet (PDF)
psmn1r9-25ylc.pdf
PSMN1R9-25YLCN-channel 25 V 2.05 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn1r9-40pl.pdf
PSMN1R9-40PLN-channel 40 V, 1.7 m logic level MOSFET in SOT781 February 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product designand manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust constructio
psmn1r9-40ysd.pdf
PSMN1R9-40YSDN-channel 40 V, 1.9 m, 200 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology27 August 2019 Product data sheet1. General description200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance
psmn1r9-40pl.pdf
isc N-Channel MOSFET Transistor PSMN1R9-40PLFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
Otros transistores... PSMN1R5-30YLC , PSMN1R5-40ES , PSMN1R5-40PS , PSMN1R6-30PL , PSMN1R7-25YLC , PSMN1R7-30YL , PSMN1R7-60BS , PSMN1R8-30PL , P0903BDG , PSMN2R0-30PL , PSMN2R0-30YL , PSMN2R0-60ES , PSMN2R0-60PS , PSMN2R2-25YLC , PSMN2R2-30YLC , PSMN2R2-40PS , PSMN2R5-30YL .
