All MOSFET. PSMN1R9-25YLC Datasheet

 

PSMN1R9-25YLC Datasheet and Replacement


   Type Designator: PSMN1R9-25YLC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 141 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00205 Ohm
   Package: LFPAK
 

 PSMN1R9-25YLC substitution

   - MOSFET ⓘ Cross-Reference Search

 

PSMN1R9-25YLC Datasheet (PDF)

 ..1. Size:353K  philips
psmn1r9-25ylc.pdf pdf_icon

PSMN1R9-25YLC

PSMN1R9-25YLCN-channel 25 V 2.05 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 6.1. Size:255K  nxp
psmn1r9-40pl.pdf pdf_icon

PSMN1R9-25YLC

PSMN1R9-40PLN-channel 40 V, 1.7 m logic level MOSFET in SOT781 February 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product designand manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust constructio

 6.2. Size:303K  nxp
psmn1r9-40ysd.pdf pdf_icon

PSMN1R9-25YLC

PSMN1R9-40YSDN-channel 40 V, 1.9 m, 200 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology27 August 2019 Product data sheet1. General description200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance

 6.3. Size:261K  inchange semiconductor
psmn1r9-40pl.pdf pdf_icon

PSMN1R9-25YLC

isc N-Channel MOSFET Transistor PSMN1R9-40PLFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: PSMN1R5-30YLC , PSMN1R5-40ES , PSMN1R5-40PS , PSMN1R6-30PL , PSMN1R7-25YLC , PSMN1R7-30YL , PSMN1R7-60BS , PSMN1R8-30PL , 4N60 , PSMN2R0-30PL , PSMN2R0-30YL , PSMN2R0-60ES , PSMN2R0-60PS , PSMN2R2-25YLC , PSMN2R2-30YLC , PSMN2R2-40PS , PSMN2R5-30YL .

History: MDH3331RP | BLM12P03-R | AONS66923 | PSMN1R2-25YLC | APM8005K | AONS36312 | PSMN030-150P

Keywords - PSMN1R9-25YLC MOSFET datasheet

 PSMN1R9-25YLC cross reference
 PSMN1R9-25YLC equivalent finder
 PSMN1R9-25YLC lookup
 PSMN1R9-25YLC substitution
 PSMN1R9-25YLC replacement

 

 
Back to Top

 


 
.