APT10025JVFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT10025JVFR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 700 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 34 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 1360 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm

Encapsulados: SOT227

 Búsqueda de reemplazo de APT10025JVFR MOSFET

- Selecciónⓘ de transistores por parámetros

 

APT10025JVFR datasheet

 ..1. Size:73K  apt
 apt10025jvfr.pdf pdf_icon

APT10025JVFR

 4.1. Size:71K  apt
 apt10025jvr.pdf pdf_icon

APT10025JVFR

APT10025JVR 1000V 34A 0.250 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

 5.1. Size:34K  apt
 apt10025jlc.pdf pdf_icon

APT10025JVFR

APT10025JLC 1000V 34A 0.250W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOT

 6.1. Size:35K  apt
 apt10025pvr.pdf pdf_icon

APT10025JVFR

APT10025PVR 1000V 33A 0.250 POWER MOS V P-Pack Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

MOSTRAR MÁS

Otros transistores... APT1001R3AN, APT1001R3BN, APT1001R3HN, APT1001R6BN, APT1001RAN, APT1001RBN, APT1001RBVR, APT1001RSVR, IRLB4132, APT10025JVR, APT10025PVR, APT10026JN, APT1002R4AN, APT1002R4BN, APT1002R4CN, APT1002RAN, APT1002RBN