All MOSFET. APT10025JVFR Datasheet

 

APT10025JVFR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT10025JVFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 700 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 660 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 1360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT227

 APT10025JVFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT10025JVFR Datasheet (PDF)

 ..1. Size:73K  apt
 apt10025jvfr.pdf

APT10025JVFR APT10025JVFR

APT10025JVFR1000V 34A 0.250POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

 4.1. Size:71K  apt
 apt10025jvr.pdf

APT10025JVFR APT10025JVFR

APT10025JVR1000V 34A 0.250POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 5.1. Size:34K  apt
 apt10025jlc.pdf

APT10025JVFR APT10025JVFR

APT10025JLC1000V 34A 0.250WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,"UL Recognized"delivers exceptionally fast switching speeds.ISOT

 6.1. Size:35K  apt
 apt10025pvr.pdf

APT10025JVFR APT10025JVFR

APT10025PVR1000V 33A 0.250POWER MOS VP-PackPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

Datasheet: APT1001R3AN , APT1001R3BN , APT1001R3HN , APT1001R6BN , APT1001RAN , APT1001RBN , APT1001RBVR , APT1001RSVR , SPP20N60C3 , APT10025JVR , APT10025PVR , APT10026JN , APT1002R4AN , APT1002R4BN , APT1002R4CN , APT1002RAN , APT1002RBN .

History: STW8N80

 

 
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