PSMN2R5-30YL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN2R5-30YL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 88 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm

Encapsulados: LFPAK

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PSMN2R5-30YL datasheet

 ..1. Size:390K  philips
 psmn2r5-30yl.pdf pdf_icon

PSMN2R5-30YL

PSMN2R5-30YL N-channel 30 V 2.4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benef

 ..2. Size:980K  nxp
 psmn2r5-30yl.pdf pdf_icon

PSMN2R5-30YL

PSMN2R5-30YL N-channel 30 V 2.4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benef

 6.1. Size:253K  nxp
 psmn2r5-60pl.pdf pdf_icon

PSMN2R5-30YL

PSMN2R5-60PL N-channel 60 V, 2.6 m logic level MOSFET in SOT78 27 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust constructi

 6.2. Size:304K  nxp
 psmn2r5-40yld.pdf pdf_icon

PSMN2R5-30YL

PSMN2R5-40YLD N-channel 40 V, 2.6 m , 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power

MOSTRAR MÁS

Otros transistores... PSMN1R9-25YLC, PSMN2R0-30PL, PSMN2R0-30YL, PSMN2R0-60ES, PSMN2R0-60PS, PSMN2R2-25YLC, PSMN2R2-30YLC, PSMN2R2-40PS, AON7506, PSMN2R6-30YLC, PSMN2R6-40YS, PSMN2R7-30PL, PSMN2R8-40PS, PSMN2R9-25YLC, PSMN3R0-30YL, PSMN3R0-60ES, PSMN3R0-60PS