PSMN2R5-30YL. Аналоги и основные параметры

Наименование производителя: PSMN2R5-30YL

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 88 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm

Тип корпуса: LFPAK

Аналог (замена) для PSMN2R5-30YL

- подборⓘ MOSFET транзистора по параметрам

 

PSMN2R5-30YL даташит

 ..1. Size:390K  philips
 psmn2r5-30yl.pdf pdf_icon

PSMN2R5-30YL

PSMN2R5-30YL N-channel 30 V 2.4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benef

 ..2. Size:980K  nxp
 psmn2r5-30yl.pdf pdf_icon

PSMN2R5-30YL

PSMN2R5-30YL N-channel 30 V 2.4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benef

 6.1. Size:253K  nxp
 psmn2r5-60pl.pdf pdf_icon

PSMN2R5-30YL

PSMN2R5-60PL N-channel 60 V, 2.6 m logic level MOSFET in SOT78 27 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust constructi

 6.2. Size:304K  nxp
 psmn2r5-40yld.pdf pdf_icon

PSMN2R5-30YL

PSMN2R5-40YLD N-channel 40 V, 2.6 m , 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power

ПОКАЗАТЬ ЕЩЁ

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