PSMN2R6-40YS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN2R6-40YS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 131 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
Paquete / Cubierta: LFPAK
Búsqueda de reemplazo de PSMN2R6-40YS MOSFET
PSMN2R6-40YS Datasheet (PDF)
psmn2r6-40ys.pdf

PSMN2R6-40YSN-channel LFPAK 40 V 2.8 m standard level MOSFETRev. 01 23 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
psmn2r6-40ys.pdf

PSMN2R6-40YSN-channel LFPAK 40 V 2.8 m standard level MOSFETRev. 01 23 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
psmn2r6-30ylc.pdf

PSMN2R6-30YLCN-channel 30 V 2.8m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn2r6-30ylc.pdf

PSMN2R6-30YLCN-channel 30 V 2.8m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
Otros transistores... PSMN2R0-30YL , PSMN2R0-60ES , PSMN2R0-60PS , PSMN2R2-25YLC , PSMN2R2-30YLC , PSMN2R2-40PS , PSMN2R5-30YL , PSMN2R6-30YLC , IRF1407 , PSMN2R7-30PL , PSMN2R8-40PS , PSMN2R9-25YLC , PSMN3R0-30YL , PSMN3R0-60ES , PSMN3R0-60PS , PSMN3R2-25YLC , PSMN3R2-30YLC .
History: ELM14806AA | NP22N055HHE | HGB110N10SL | IPA60R250CP | BUK7Y4R4-40E | AP9990GP-HF | 12N80L-TF2-T
History: ELM14806AA | NP22N055HHE | HGB110N10SL | IPA60R250CP | BUK7Y4R4-40E | AP9990GP-HF | 12N80L-TF2-T



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