PSMN2R6-40YS Datasheet. Equivalente

 ..1. Size:221K  philips
 psmn2r6-40ys.pdf

PSMN2R6-40YS N-channel LFPAK 40 V 2.8 m standard level MOSFET Rev. 01 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 ..2. Size:728K  nxp
 psmn2r6-40ys.pdf

PSMN2R6-40YS N-channel LFPAK 40 V 2.8 m standard level MOSFET Rev. 01 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 6.1. Size:341K  philips
 psmn2r6-30ylc.pdf

PSMN2R6-30YLC N-channel 30 V 2.8m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 6.2. Size:926K  nxp
 psmn2r6-30ylc.pdf

PSMN2R6-30YLC N-channel 30 V 2.8m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 6.3. Size:253K  nxp
 psmn2r6-60ps.pdf

PSMN2R6-60PS N-channel 60 V, 2.6 m standard level MOSFET in SOT78 5 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust const

 6.4. Size:261K  inchange semiconductor
 psmn2r6-60ps.pdf

isc N-Channel MOSFET Transistor PSMN2R6-60PS FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general