PSMN2R6-40YS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN2R6-40YS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 131 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 63 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PSMN2R6-40YS
PSMN2R6-40YS Datasheet (PDF)
psmn2r6-40ys.pdf
PSMN2R6-40YSN-channel LFPAK 40 V 2.8 m standard level MOSFETRev. 01 23 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
psmn2r6-40ys.pdf
PSMN2R6-40YSN-channel LFPAK 40 V 2.8 m standard level MOSFETRev. 01 23 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
psmn2r6-30ylc.pdf
PSMN2R6-30YLCN-channel 30 V 2.8m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn2r6-30ylc.pdf
PSMN2R6-30YLCN-channel 30 V 2.8m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn2r6-60ps.pdf
PSMN2R6-60PSN-channel 60 V, 2.6 m standard level MOSFET in SOT785 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in SOT78 using TrenchMOS technology. Productdesign and manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust const
psmn2r6-60ps.pdf
isc N-Channel MOSFET Transistor PSMN2R6-60PSFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SFG60N12FF
History: SFG60N12FF
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918