PSMN2R8-40PS Todos los transistores

 ..1. Size:222K  philips
 psmn2r8-40ps.pdf

PSMN2R8-40PS N-channel TO220 40 V 2.8 m standard level MOSFET Rev. 01 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

 ..2. Size:745K  nxp
 psmn2r8-40ps.pdf

PSMN2R8-40PS N-channel TO220 40 V 2.8 m standard level MOSFET 11 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduct

 ..3. Size:261K  inchange semiconductor
 psmn2r8-40ps.pdf

isc N-Channel MOSFET Transistor PSMN2R8-40PS FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 4.1. Size:301K  nxp
 psmn2r8-40ysd.pdf

PSMN2R8-40YSD N-channel 40 V, 2.8 m , 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 26 August 2019 Product data sheet 1. General description 160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance

 4.2. Size:216K  nxp
 psmn2r8-40bs.pdf

PSMN2R8-40BS N-channel 40 V 2.9 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficie

 4.3. Size:254K  inchange semiconductor
 psmn2r8-40bs.pdf

isc N-Channel MOSFET Transistor PSMN2R8-40BS FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general