PSMN2R8-40PS Specs and Replacement

Type Designator: PSMN2R8-40PS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 211 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO220AB

PSMN2R8-40PS substitution

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PSMN2R8-40PS datasheet

 ..1. Size:222K  philips
psmn2r8-40ps.pdf pdf_icon

PSMN2R8-40PS

PSMN2R8-40PS N-channel TO220 40 V 2.8 m standard level MOSFET Rev. 01 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency ... See More ⇒

 ..2. Size:745K  nxp
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PSMN2R8-40PS

PSMN2R8-40PS N-channel TO220 40 V 2.8 m standard level MOSFET 11 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduct... See More ⇒

 ..3. Size:261K  inchange semiconductor
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PSMN2R8-40PS

isc N-Channel MOSFET Transistor PSMN2R8-40PS FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

 4.1. Size:301K  nxp
psmn2r8-40ysd.pdf pdf_icon

PSMN2R8-40PS

PSMN2R8-40YSD N-channel 40 V, 2.8 m , 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 26 August 2019 Product data sheet 1. General description 160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance ... See More ⇒

Detailed specifications: PSMN2R0-60PS, PSMN2R2-25YLC, PSMN2R2-30YLC, PSMN2R2-40PS, PSMN2R5-30YL, PSMN2R6-30YLC, PSMN2R6-40YS, PSMN2R7-30PL, AO4407, PSMN2R9-25YLC, PSMN3R0-30YL, PSMN3R0-60ES, PSMN3R0-60PS, PSMN3R2-25YLC, PSMN3R2-30YLC, PSMN3R3-40YS, PSMN3R4-30PL

Keywords - PSMN2R8-40PS MOSFET specs

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 PSMN2R8-40PS replacement

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