PSMN3R4-30PL Todos los transistores

 ..1. Size:219K  philips
 psmn3r4-30pl.pdf

PSMN3R4-30PL N-channel 30 V 3.4 m logic level MOSFET Rev. 01 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low s

 ..2. Size:814K  nxp
 psmn3r4-30pl.pdf

PSMN3R4-30PL N-channel 30 V 3.4 m logic level MOSFET Rev. 01 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low s

 ..3. Size:261K  inchange semiconductor
 psmn3r4-30pl.pdf

isc N-Channel MOSFET Transistor PSMN3R4-30PL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 3.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 4.1. Size:210K  nxp
 psmn3r4-30bl.pdf

PSMN3R4-30BL N-channel 30 V 3.3 m logic level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 4.2. Size:221K  nxp
 psmn3r4-30ble.pdf

PSMN3R4-30BLE N-channel 30 V 3.4 m logic level MOSFET in D2PAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Enhanced forward biased safe

 4.3. Size:254K  inchange semiconductor
 psmn3r4-30bl.pdf

isc N-Channel MOSFET Transistor PSMN3R4-30BL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 3.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 4.4. Size:255K  inchange semiconductor
 psmn3r4-30ble.pdf

isc N-Channel MOSFET Transistor PSMN3R4-30BLE FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 3.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general