All MOSFET. PSMN3R4-30PL Datasheet

 

PSMN3R4-30PL MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN3R4-30PL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 114 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.15 V
   Maximum Drain Current |Id|: 100 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 64 nC
   Maximum Drain-Source On-State Resistance (Rds): 0.0034 Ohm
   Package: TO220AB

 PSMN3R4-30PL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN3R4-30PL Datasheet (PDF)

 ..1. Size:219K  philips
psmn3r4-30pl.pdf

PSMN3R4-30PL
PSMN3R4-30PL

PSMN3R4-30PLN-channel 30 V 3.4 m logic level MOSFETRev. 01 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low s

 ..2. Size:814K  nxp
psmn3r4-30pl.pdf

PSMN3R4-30PL
PSMN3R4-30PL

PSMN3R4-30PLN-channel 30 V 3.4 m logic level MOSFETRev. 01 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low s

 ..3. Size:261K  inchange semiconductor
psmn3r4-30pl.pdf

PSMN3R4-30PL
PSMN3R4-30PL

isc N-Channel MOSFET Transistor PSMN3R4-30PLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.1. Size:210K  nxp
psmn3r4-30bl.pdf

PSMN3R4-30PL
PSMN3R4-30PL

PSMN3R4-30BLN-channel 30 V 3.3 m logic level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

 4.2. Size:221K  nxp
psmn3r4-30ble.pdf

PSMN3R4-30PL
PSMN3R4-30PL

PSMN3R4-30BLEN-channel 30 V 3.4 m logic level MOSFET in D2PAK12 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits Enhanced forward biased safe

 4.3. Size:254K  inchange semiconductor
psmn3r4-30bl.pdf

PSMN3R4-30PL
PSMN3R4-30PL

isc N-Channel MOSFET Transistor PSMN3R4-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.4. Size:255K  inchange semiconductor
psmn3r4-30ble.pdf

PSMN3R4-30PL
PSMN3R4-30PL

isc N-Channel MOSFET Transistor PSMN3R4-30BLEFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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