PSMN4R0-40YS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN4R0-40YS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 106 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
Paquete / Cubierta: LFPAK
Búsqueda de reemplazo de MOSFET PSMN4R0-40YS
PSMN4R0-40YS Datasheet (PDF)
psmn4r0-40ys.pdf
PSMN4R0-40YSN-channel LFPAK 40 V 4.2 m standard level MOSFETRev. 02 12 July 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM
psmn4r0-40ys.pdf
PSMN4R0-40YSN-channel LFPAK 40 V 4.2 m standard level MOSFETRev. 02 12 July 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM
psmn4r0-25ylc.pdf
PSMN4R0-25YLCN-channel 25 V 4.5 m logic level MOSFET in LFPAKRev. 01 2 December 2010 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High reliability Po
psmn4r0-30yl.pdf
PSMN4R0-30YLN-channel 30 V 4 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit
psmn4r0-25ylc.pdf
PSMN4R0-25YLCN-channel 25 V 4.5 m logic level MOSFET in LFPAKRev. 01 2 December 2010 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High reliability Po
psmn4r0-60ys.pdf
PSMN4R0-60YSN-channel LFPAK 60 V, 4.0 m standard level FET14 May 2015 Product data sheet1. General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of telecom, industrial and domesticequipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge
psmn4r0-30yl.pdf
PSMN4R0-30YLN-channel 30 V 4 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit
psmn4r0-30yld.pdf
PSMN4R0-30YLDN-channel 30 V, 4.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology10 October 2013 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFETs
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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