All MOSFET. PSMN4R0-40YS Datasheet

 

PSMN4R0-40YS MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN4R0-40YS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 106 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 38 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: LFPAK

 PSMN4R0-40YS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN4R0-40YS Datasheet (PDF)

 ..1. Size:374K  philips
psmn4r0-40ys.pdf

PSMN4R0-40YS
PSMN4R0-40YS

PSMN4R0-40YSN-channel LFPAK 40 V 4.2 m standard level MOSFETRev. 02 12 July 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 ..2. Size:951K  nxp
psmn4r0-40ys.pdf

PSMN4R0-40YS
PSMN4R0-40YS

PSMN4R0-40YSN-channel LFPAK 40 V 4.2 m standard level MOSFETRev. 02 12 July 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 6.1. Size:396K  philips
psmn4r0-25ylc.pdf

PSMN4R0-40YS
PSMN4R0-40YS

PSMN4R0-25YLCN-channel 25 V 4.5 m logic level MOSFET in LFPAKRev. 01 2 December 2010 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High reliability Po

 6.2. Size:233K  philips
psmn4r0-30yl.pdf

PSMN4R0-40YS
PSMN4R0-40YS

PSMN4R0-30YLN-channel 30 V 4 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

 6.3. Size:1002K  nxp
psmn4r0-25ylc.pdf

PSMN4R0-40YS
PSMN4R0-40YS

PSMN4R0-25YLCN-channel 25 V 4.5 m logic level MOSFET in LFPAKRev. 01 2 December 2010 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High reliability Po

 6.4. Size:263K  nxp
psmn4r0-60ys.pdf

PSMN4R0-40YS
PSMN4R0-40YS

PSMN4R0-60YSN-channel LFPAK 60 V, 4.0 m standard level FET14 May 2015 Product data sheet1. General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of telecom, industrial and domesticequipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge

 6.5. Size:819K  nxp
psmn4r0-30yl.pdf

PSMN4R0-40YS
PSMN4R0-40YS

PSMN4R0-30YLN-channel 30 V 4 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

 6.6. Size:361K  nxp
psmn4r0-30yld.pdf

PSMN4R0-40YS
PSMN4R0-40YS

PSMN4R0-30YLDN-channel 30 V, 4.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology10 October 2013 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFETs

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History: 2SK3210

 

 
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