APT10026JN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT10026JN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 690 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 33 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 1345 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
Encapsulados: SOT227
Búsqueda de reemplazo de APT10026JN MOSFET
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APT10026JN datasheet
apt10026jn.pdf
D G APT10026JN 1000V 33A 0.26 S "UL Recognized" File No. E145592 (S) ISOTOP POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT Symbol Parameter 10026JN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 33 Amps IDM, lLM Pulse
apt10026jll.pdf
APT10026JLL 1000V 30A 0.260W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's
apt10026jfll.pdf
APT10026JFLL 1000V 30A 0.140W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi
apt10026l2ll.pdf
APT10026L2LL 1000V 38A 0.260W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent
Otros transistores... APT1001R6BN, APT1001RAN, APT1001RBN, APT1001RBVR, APT1001RSVR, APT10025JVFR, APT10025JVR, APT10025PVR, IRFP260, APT1002R4AN, APT1002R4BN, APT1002R4CN, APT1002RAN, APT1002RBN, APT1002RCN, APT1003R5AN, APT1003R5BN
History: IPS118N10NG
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