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APT10026JN PDF Specs and Replacement


   Type Designator: APT10026JN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 690 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 1345 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: SOT227
 

 APT10026JN substitution

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APT10026JN PDF Specs

 ..1. Size:63K  apt
apt10026jn.pdf pdf_icon

APT10026JN

D G APT10026JN 1000V 33A 0.26 S "UL Recognized" File No. E145592 (S) ISOTOP POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT Symbol Parameter 10026JN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 33 Amps IDM, lLM Pulse... See More ⇒

 5.1. Size:69K  apt
apt10026jll.pdf pdf_icon

APT10026JN

APT10026JLL 1000V 30A 0.260W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's ... See More ⇒

 5.2. Size:71K  apt
apt10026jfll.pdf pdf_icon

APT10026JN

APT10026JFLL 1000V 30A 0.140W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi... See More ⇒

 6.1. Size:64K  apt
apt10026l2ll.pdf pdf_icon

APT10026JN

APT10026L2LL 1000V 38A 0.260W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent... See More ⇒

Detailed specifications: APT1001R6BN , APT1001RAN , APT1001RBN , APT1001RBVR , APT1001RSVR , APT10025JVFR , APT10025JVR , APT10025PVR , IRFP260 , APT1002R4AN , APT1002R4BN , APT1002R4CN , APT1002RAN , APT1002RBN , APT1002RCN , APT1003R5AN , APT1003R5BN .

History: BFL4026

Keywords - APT10026JN MOSFET specs

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