All MOSFET. APT10026JN Datasheet

 

APT10026JN Datasheet and Replacement


   Type Designator: APT10026JN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 690 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 465 nC
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 1345 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: SOT227
 

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APT10026JN Datasheet (PDF)

 ..1. Size:63K  apt
apt10026jn.pdf pdf_icon

APT10026JN

DGAPT10026JN 1000V 33A 0.26S"UL Recognized" File No. E145592 (S)ISOTOPPOWER MOS IV SINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 10026JN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C33AmpsIDM, lLM Pulse

 5.1. Size:69K  apt
apt10026jll.pdf pdf_icon

APT10026JN

APT10026JLL1000V 30A 0.260WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

 5.2. Size:71K  apt
apt10026jfll.pdf pdf_icon

APT10026JN

APT10026JFLL1000V 30A 0.140WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wi

 6.1. Size:64K  apt
apt10026l2ll.pdf pdf_icon

APT10026JN

APT10026L2LL1000V 38A 0.260WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent

Datasheet: APT1001R6BN , APT1001RAN , APT1001RBN , APT1001RBVR , APT1001RSVR , APT10025JVFR , APT10025JVR , APT10025PVR , 8205A , APT1002R4AN , APT1002R4BN , APT1002R4CN , APT1002RAN , APT1002RBN , APT1002RCN , APT1003R5AN , APT1003R5BN .

History: SML1004R2GN | SML100J19

Keywords - APT10026JN MOSFET datasheet

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