PSMN5R0-30YL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN5R0-30YL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 61 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 91 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: LFPAK
Búsqueda de reemplazo de PSMN5R0-30YL MOSFET
PSMN5R0-30YL Datasheet (PDF)
psmn5r0-30yl.pdf

PSMN5R0-30YLN-channel 30 V 5 m logic level MOSFET in LFPAKRev. 4 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits
psmn5r0-30yl.pdf

PSMN5R0-30YLN-channel 30 V 5 m logic level MOSFET in LFPAKRev. 4 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits
psmn5r0-100es.pdf

PSMN5R0-100ESN-channel 100 V 5 m standard level MOSFET in I2PAKRev. 2 15 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc
psmn5r0-80ps.pdf

PSMN5R0-80PSN-channel 80 V 4.7 m standard level MOSFETRev. 02 23 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo
Otros transistores... PSMN4R3-80ES , PSMN4R3-80PS , PSMN4R4-80PS , PSMN4R5-30YLC , PSMN4R5-40PS , PSMN4R6-60PS , PSMN5R0-100ES , PSMN5R0-100PS , EMB04N03H , PSMN5R0-80PS , PSMN5R5-60YS , PSMN5R6-100PS , PSMN5R6-100XS , PSMN5R8-30LL , PSMN5R8-40YS , PSMN5R9-30YL , PSMN6R0-25YLB .
History: AOTF12N50 | IPP60R074C6 | AOTF11N70
History: AOTF12N50 | IPP60R074C6 | AOTF11N70



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