PSMN5R0-30YL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN5R0-30YL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 61 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 91 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: LFPAK

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PSMN5R0-30YL datasheet

 ..1. Size:231K  philips
psmn5r0-30yl.pdf pdf_icon

PSMN5R0-30YL

PSMN5R0-30YL N-channel 30 V 5 m logic level MOSFET in LFPAK Rev. 4 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits

 ..2. Size:817K  nxp
psmn5r0-30yl.pdf pdf_icon

PSMN5R0-30YL

PSMN5R0-30YL N-channel 30 V 5 m logic level MOSFET in LFPAK Rev. 4 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits

 6.1. Size:238K  philips
psmn5r0-100es.pdf pdf_icon

PSMN5R0-30YL

PSMN5R0-100ES N-channel 100 V 5 m standard level MOSFET in I2PAK Rev. 2 15 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc

 6.2. Size:224K  philips
psmn5r0-80ps.pdf pdf_icon

PSMN5R0-30YL

PSMN5R0-80PS N-channel 80 V 4.7 m standard level MOSFET Rev. 02 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to lo

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