PSMN5R0-30YL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN5R0-30YL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 61 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 91 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Encapsulados: LFPAK
Búsqueda de reemplazo de PSMN5R0-30YL MOSFET
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PSMN5R0-30YL datasheet
psmn5r0-30yl.pdf
PSMN5R0-30YL N-channel 30 V 5 m logic level MOSFET in LFPAK Rev. 4 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits
psmn5r0-30yl.pdf
PSMN5R0-30YL N-channel 30 V 5 m logic level MOSFET in LFPAK Rev. 4 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits
psmn5r0-100es.pdf
PSMN5R0-100ES N-channel 100 V 5 m standard level MOSFET in I2PAK Rev. 2 15 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc
psmn5r0-80ps.pdf
PSMN5R0-80PS N-channel 80 V 4.7 m standard level MOSFET Rev. 02 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to lo
Otros transistores... PSMN4R3-80ES, PSMN4R3-80PS, PSMN4R4-80PS, PSMN4R5-30YLC, PSMN4R5-40PS, PSMN4R6-60PS, PSMN5R0-100ES, PSMN5R0-100PS, IRLB3034, PSMN5R0-80PS, PSMN5R5-60YS, PSMN5R6-100PS, PSMN5R6-100XS, PSMN5R8-30LL, PSMN5R8-40YS, PSMN5R9-30YL, PSMN6R0-25YLB
History: CSD16409Q3 | APT30M30JLL | APT20M36BLL | PSMN4R6-60PS
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