All MOSFET. PSMN5R0-30YL Datasheet

 

PSMN5R0-30YL Datasheet and Replacement


   Type Designator: PSMN5R0-30YL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 61 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 91 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: LFPAK
 

 PSMN5R0-30YL substitution

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PSMN5R0-30YL Datasheet (PDF)

 ..1. Size:231K  philips
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PSMN5R0-30YL

PSMN5R0-30YLN-channel 30 V 5 m logic level MOSFET in LFPAKRev. 4 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

 ..2. Size:817K  nxp
psmn5r0-30yl.pdf pdf_icon

PSMN5R0-30YL

PSMN5R0-30YLN-channel 30 V 5 m logic level MOSFET in LFPAKRev. 4 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

 6.1. Size:238K  philips
psmn5r0-100es.pdf pdf_icon

PSMN5R0-30YL

PSMN5R0-100ESN-channel 100 V 5 m standard level MOSFET in I2PAKRev. 2 15 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

 6.2. Size:224K  philips
psmn5r0-80ps.pdf pdf_icon

PSMN5R0-30YL

PSMN5R0-80PSN-channel 80 V 4.7 m standard level MOSFETRev. 02 23 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo

Datasheet: PSMN4R3-80ES , PSMN4R3-80PS , PSMN4R4-80PS , PSMN4R5-30YLC , PSMN4R5-40PS , PSMN4R6-60PS , PSMN5R0-100ES , PSMN5R0-100PS , 60N06 , PSMN5R0-80PS , PSMN5R5-60YS , PSMN5R6-100PS , PSMN5R6-100XS , PSMN5R8-30LL , PSMN5R8-40YS , PSMN5R9-30YL , PSMN6R0-25YLB .

History: NVMTS0D6N04C | SI7623DN

Keywords - PSMN5R0-30YL MOSFET datasheet

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