PSMN6R5-25YLC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN6R5-25YLC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 64 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: LFPAK

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PSMN6R5-25YLC datasheet

 ..1. Size:898K  nxp
 psmn6r5-25ylc.pdf pdf_icon

PSMN6R5-25YLC

PSMN6R5-25YLC N-channel 25 V 6.5 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 31 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benef

 6.1. Size:222K  philips
 psmn6r5-80ps.pdf pdf_icon

PSMN6R5-25YLC

PSMN6R5-80PS N-channel 80 V 6.9 m standard level MOSFET in TO220 Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 6.2. Size:229K  nxp
 psmn6r5-80bs.pdf pdf_icon

PSMN6R5-25YLC

PSMN6R5-80BS N-channel 80V 6.9m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

 6.3. Size:286K  nxp
 psmn6r5-30mld.pdf pdf_icon

PSMN6R5-25YLC

PSMN6R5-30MLD N-channel 30 V, 6.5 m logic level MOSFET in LFPAK33 using NextPowerS3 Technology 21 January 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia s unique SchottkyPlus technology, delivers high efficiency and the low spiking performance usually as

MOSTRAR MÁS

Otros transistores... PSMN5R6-100PS, PSMN5R6-100XS, PSMN5R8-30LL, PSMN5R8-40YS, PSMN5R9-30YL, PSMN6R0-25YLB, PSMN6R0-30YL, PSMN6R0-30YLB, IRFP064N, PSMN6R5-80PS, PSMN7R0-100ES, PSMN7R0-100PS, PSMN7R0-100XS, PSMN7R0-30YL, PSMN7R0-30YLC, PSMN7R0-40LS, PSMN7R0-60YS