PSMN6R5-25YLC Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PSMN6R5-25YLC
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 48 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 64 A
Tj ⓘ - Максимальная температура канала: 175 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PSMN6R5-25YLC
PSMN6R5-25YLC Datasheet (PDF)
psmn6r5-25ylc.pdf

PSMN6R5-25YLCN-channel 25 V 6.5 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef
psmn6r5-80ps.pdf

PSMN6R5-80PSN-channel 80 V 6.9 m standard level MOSFET in TO220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien
psmn6r5-80bs.pdf

PSMN6R5-80BSN-channel 80V 6.9m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
psmn6r5-30mld.pdf

PSMN6R5-30MLDN-channel 30 V, 6.5 m logic level MOSFET in LFPAK33 usingNextPowerS3 Technology21 January 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. TheNextPowerS3 portfolio, utilising Nexperias unique SchottkyPlus technology, delivers highefficiency and the low spiking performance usually as
Другие MOSFET... PSMN5R6-100PS , PSMN5R6-100XS , PSMN5R8-30LL , PSMN5R8-40YS , PSMN5R9-30YL , PSMN6R0-25YLB , PSMN6R0-30YL , PSMN6R0-30YLB , 5N50 , PSMN6R5-80PS , PSMN7R0-100ES , PSMN7R0-100PS , PSMN7R0-100XS , PSMN7R0-30YL , PSMN7R0-30YLC , PSMN7R0-40LS , PSMN7R0-60YS .
History: H05N60F | TPCA8A09-H | H50N03J | DMG3413L | TF68N80 | STL9N60M2 | IPB083N10N3G
History: H05N60F | TPCA8A09-H | H50N03J | DMG3413L | TF68N80 | STL9N60M2 | IPB083N10N3G



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