PSMN7R0-100XS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN7R0-100XS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 57 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 55 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de PSMN7R0-100XS MOSFET
PSMN7R0-100XS Datasheet (PDF)
psmn7r0-100es.pdf

PSMN7R0-100ESN-channel 100V 6.8 m standard level MOSFET in I2PAK.Rev. 03 23 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien
psmn7r0-100ps.pdf

PSMN7R0-100PSN-channel 100V 6.8 m standard level MOSFET in TO220Rev. 02 7 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
psmn7r0-100bs.pdf

PSMN7R0-100BSN-channel 100V 6.8 m standard level MOSFET in D2PAK.Rev. 2 2 March 2012 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien
psmn7r0-100ps.pdf

PSMN7R0-100PSN-channel 100V 6.8 m standard level MOSFET in TO220.17 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduc
Otros transistores... PSMN5R9-30YL , PSMN6R0-25YLB , PSMN6R0-30YL , PSMN6R0-30YLB , PSMN6R5-25YLC , PSMN6R5-80PS , PSMN7R0-100ES , PSMN7R0-100PS , IRF3205 , PSMN7R0-30YL , PSMN7R0-30YLC , PSMN7R0-40LS , PSMN7R0-60YS , PSMN7R5-25YLC , PSMN7R6-60PS , PSMN8R0-30YL , PSMN8R0-30YLC .
History: AM7510C | BSF450NE7NH3G | IRF7452
History: AM7510C | BSF450NE7NH3G | IRF7452



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