All MOSFET. PSMN7R0-100XS Datasheet

 

PSMN7R0-100XS Datasheet and Replacement


   Type Designator: PSMN7R0-100XS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: TO220F
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PSMN7R0-100XS Datasheet (PDF)

 3.1. Size:241K  philips
 psmn7r0-100es.pdf pdf_icon

PSMN7R0-100XS

PSMN7R0-100ESN-channel 100V 6.8 m standard level MOSFET in I2PAK.Rev. 03 23 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 3.2. Size:243K  philips
 psmn7r0-100ps.pdf pdf_icon

PSMN7R0-100XS

PSMN7R0-100PSN-channel 100V 6.8 m standard level MOSFET in TO220Rev. 02 7 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 3.3. Size:223K  nxp
 psmn7r0-100bs.pdf pdf_icon

PSMN7R0-100XS

PSMN7R0-100BSN-channel 100V 6.8 m standard level MOSFET in D2PAK.Rev. 2 2 March 2012 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 3.4. Size:740K  nxp
 psmn7r0-100ps.pdf pdf_icon

PSMN7R0-100XS

PSMN7R0-100PSN-channel 100V 6.8 m standard level MOSFET in TO220.17 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduc

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB22N03S4L-15 | LSC65R280HT | 2SK3700

Keywords - PSMN7R0-100XS MOSFET datasheet

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