PSMN7R0-30YL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN7R0-30YL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 51 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 76 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: LFPAK

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PSMN7R0-30YL datasheet

 ..1. Size:385K  philips
psmn7r0-30yl.pdf pdf_icon

PSMN7R0-30YL

PSMN7R0-30YL N-channel 30 V 7 m logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits

 ..2. Size:974K  nxp
psmn7r0-30yl.pdf pdf_icon

PSMN7R0-30YL

PSMN7R0-30YL N-channel 30 V 7 m logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits

 0.1. Size:771K  nxp
psmn7r0-30ylc.pdf pdf_icon

PSMN7R0-30YL

PSMN7R0-30YLC N-channel 30 V 7.1 m logic level MOSFET in LFPAK using NextPower technology Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics QGD gate-drain charge VGS =4.5V; ID =20A; - 2.5 - nC VDS =15V; see Figure 14; see Figure 15 QG(tot) total gate charge VGS =4.5V; ID =20A; - 7.9 - nC VDS =15V; see Figure 14; see Fi

 4.1. Size:369K  nxp
psmn7r0-30mlc.pdf pdf_icon

PSMN7R0-30YL

PSMN7R0-30MLC N-channel 30 V 7 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefi

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