PSMN7R0-30YL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN7R0-30YL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 51 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.15 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 76 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 22 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PSMN7R0-30YL
PSMN7R0-30YL Datasheet (PDF)
psmn7r0-30yl.pdf
PSMN7R0-30YLN-channel 30 V 7 m logic level MOSFET in LFPAKRev. 04 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits
psmn7r0-30yl.pdf
PSMN7R0-30YLN-channel 30 V 7 m logic level MOSFET in LFPAKRev. 04 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits
psmn7r0-30ylc.pdf
PSMN7R0-30YLCN-channel 30 V 7.1 m logic level MOSFET in LFPAK using NextPower technologyTable 1. Quick reference data continuedSymbol Parameter Conditions Min Typ Max UnitDynamic characteristicsQGD gate-drain charge VGS =4.5V; ID =20A; - 2.5 - nCVDS =15V; see Figure 14; see Figure 15QG(tot) total gate charge VGS =4.5V; ID =20A; - 7.9 - nCVDS =15V; see Figure 14; see Fi
psmn7r0-30mlc.pdf
PSMN7R0-30MLCN-channel 30 V 7 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefi
psmn7r0-40ls.pdf
PSMN7R0-40LSN-channel QFN3333 40 V 7.0 m standard level MOSFETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High effic
psmn7r0-60ys.pdf
PSMN7R0-60YSN-channel LFPAK 60 V 6.4 m standard level MOSFETRev. 02 30 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
psmn7r0-100es.pdf
PSMN7R0-100ESN-channel 100V 6.8 m standard level MOSFET in I2PAK.Rev. 03 23 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien
psmn7r0-100ps.pdf
PSMN7R0-100PSN-channel 100V 6.8 m standard level MOSFET in TO220Rev. 02 7 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
psmn7r0-100bs.pdf
PSMN7R0-100BSN-channel 100V 6.8 m standard level MOSFET in D2PAK.Rev. 2 2 March 2012 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien
psmn7r0-60ys.pdf
PSMN7R0-60YSN-channel LFPAK 60 V 6.4 m standard level MOSFETRev. 02 30 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
psmn7r0-100ps.pdf
PSMN7R0-100PSN-channel 100V 6.8 m standard level MOSFET in TO220.17 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduc
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918