PSMN9R5-100XS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN9R5-100XS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 52 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 44 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0096 Ohm

Encapsulados: TO220F

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PSMN9R5-100XS datasheet

 3.1. Size:220K  philips
psmn9r5-100ps.pdf pdf_icon

PSMN9R5-100XS

PSMN9R5-100PS N-channel 100 V 9.6 m standard level MOSFET in T0220 Rev. 03 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici

 3.2. Size:737K  nxp
psmn9r5-100ps.pdf pdf_icon

PSMN9R5-100XS

PSMN9R5-100PS N-channel 100 V 9.6 m standard level MOSFET in T0220 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and con

 3.3. Size:226K  nxp
psmn9r5-100bs.pdf pdf_icon

PSMN9R5-100XS

PSMN9R5-100BS N-channel 100 V 9.6 m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

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