PSMN9R5-100XS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN9R5-100XS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 52 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 44 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 81.5 nC
   Resistencia entre drenaje y fuente RDS(on): 0.0096 Ohm
   Paquete / Cubierta: TO220F

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PSMN9R5-100XS Datasheet (PDF)

3.1. Size:220K philips
psmn9r5-100ps.pdf

PSMN9R5-100PSN-channel 100 V 9.6 m standard level MOSFET in T0220Rev. 03 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

3.2. Size:737K nxp
psmn9r5-100ps.pdf

PSMN9R5-100PSN-channel 100 V 9.6 m standard level MOSFET in T022017 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and con

3.3. Size:226K nxp
psmn9r5-100bs.pdf

PSMN9R5-100BSN-channel 100 V 9.6 m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

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