PSMN9R5-100XS. Аналоги и основные параметры

Наименование производителя: PSMN9R5-100XS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 52 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 44 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0096 Ohm

Тип корпуса: TO220F

Аналог (замена) для PSMN9R5-100XS

- подборⓘ MOSFET транзистора по параметрам

 

PSMN9R5-100XS даташит

 3.1. Size:220K  philips
 psmn9r5-100ps.pdf pdf_icon

PSMN9R5-100XS

PSMN9R5-100PS N-channel 100 V 9.6 m standard level MOSFET in T0220 Rev. 03 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici

 3.2. Size:737K  nxp
 psmn9r5-100ps.pdf pdf_icon

PSMN9R5-100XS

PSMN9R5-100PS N-channel 100 V 9.6 m standard level MOSFET in T0220 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and con

 3.3. Size:226K  nxp
 psmn9r5-100bs.pdf pdf_icon

PSMN9R5-100XS

PSMN9R5-100BS N-channel 100 V 9.6 m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

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