STB13NK60ZT4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STB13NK60ZT4
Código: B13NK60Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 66 nC
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 210 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
Paquete / Cubierta: D2PAK
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STB13NK60ZT4 Datasheet (PDF)
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STB13NK60ZT4, STP13NK60ZSTP13NK60ZFP, STW13NK60ZN-channel 600 V, 0.48 , 13 A, TO-220, TO-220FP, D2PAKTO-247 Zener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax332STB13NK60ZT4 600 V
stb13nk60zt4 stw13nk60z stp13nk60zfp.pdf
STB13NK60ZT4, STP13NK60ZSTP13NK60ZFP, STW13NK60ZN-channel 600 V, 0.48 , 13 A, TO-220, TO-220FP, D2PAKTO-247 Zener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax332STB13NK60ZT4 600 V
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STB13NM50N/-1 - STF13NM50NSTP13NM50N - STW13NM50NN-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFETTO-220 - TO-247 - TO-220FP - I2PAK - D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB13NM50N 550 V 0.32 12 ATO-220 IPAKSTB13NM50N-1 550 V 0.32 12 ASTF13NM50N 550 V 0.32 12 A(1) 321STP13NM50N 550 V 0.32 12 ATO-247STW13N
stb13nm60n std13nm60n stf13nm60n stp13nm60n stw13nm60n.pdf
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