STB300NH02L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STB300NH02L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 24 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 275 nS
Cossⓘ - Capacitancia de salida: 3251 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
Encapsulados: D2PAK
Búsqueda de reemplazo de STB300NH02L MOSFET
- Selecciónⓘ de transistores por parámetros
STB300NH02L datasheet
..1. Size:332K st
stb300nh02l stp300nh02l.pdf 
STB300NH02L STP300NH02L N-channel 24V - 120A - TO-220 / D2PAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS(on) Max ID STB300NH02L 24V
9.1. Size:359K st
stb30ns15.pdf
STB30NS15 N-CHANNEL 150V - 0.075 - 30A D2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE VDSS RDS(on) ID STB30NS15 150 V
9.2. Size:455K st
stb30nf10.pdf
STB30NF10 STP30NF10 STP30NF10FP N-CHANNEL 100V - 0.038 - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB30NF10 100 V
9.3. Size:502K st
stb30nf10 stp30nf10 stp30nf10fp.pdf
STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB30NF10 100V
9.4. Size:59K st
stb3015l.pdf
STB3015L STP3015L N - CHANNEL 30V - 0.013 - 40A - D2PAK/TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB3015L 30 V
9.5. Size:770K st
stb30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf
STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK Features RDS(on) VDSS @ Type ID PW TJmax max 3 3 1 2 1 STB30NM60N 650 V
9.6. Size:386K st
stp30nf20 stb30nf20 stw30nf20.pdf
STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W 3 3 2 2 STB30NF20 200V 0.075 30A 125W 1 1 TO-247 3 Gate charge minimized TO-220 1 100% avalanche tested D PAK Excellent figure of me
9.7. Size:847K st
stb30nf20l.pdf
STB30NF20L N-channel 200 V, 0.065 , 30 A STripFET Power MOSFET in D2PAK package Datasheet production data Features Order code VDSS RDS(on) ID PTOT STB30NF20L 200 V 0.075 30 A 150 W TAB Gate charge minimized 100% avalanche tested 3 Excellent figure of merit (RDS* Qg) 1 Very good manufacturing repeatability D PAK Very low intrinsic capacitance App
9.8. Size:502K st
stb30nf10t4 stb30nf10 stp30nf10 stp30nf10fp.pdf
STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB30NF10 100V
9.9. Size:67K st
stb3020l.pdf
STB3020L STP3020L N - CHANNEL 30V - 0.019 - 40A - D2PAK/TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB3020L 30 V
9.10. Size:618K st
stb30nm50n sti30nm50n stf30nm50n stp30nm50n stw30nm50n.pdf
STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 , 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features RDS(on) VDSS Type ID (@Tjmax) max 3 3 1 2 1 STB30NM50N 550 V
9.11. Size:1205K st
stb30n65m5 stf30n65m5 sti30n65m5 stp30n65m5 stw30n65m5.pdf
STB30N65M5, STF30N65M5, STI30N65M5 STP30N65M5, STW30N65M5 N-channel 650 V, 0.125 , 22 A, MDmesh V Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ Type RDS(on) max ID TJMAX 3 3 1 2 3 1 2 STB30N65M5 710 V
9.12. Size:766K st
stb30nm60n sti30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf
STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK Features RDS(on) VDSS @ Type ID PW TJmax max 3 3 1 2 1 STB30NM60N 650 V
9.13. Size:43K st
stb30n10-.pdf
STB30N10 N - CHANNEL 100V - 0.06 - 30A - D2PAK POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STB30N10 100 V
9.14. Size:792K st
stw30nm60nd stp30nm60nd stf30nm60nd sti30nm60nd stb30nm60nd.pdf
STx30NM60ND N-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features VDSS @TJ RDS(on) Type ID max max 3 3 2 2 2 STB30NM60ND 25 A I PAK 1 1 TO-247 STI30NM60ND 25 A STF30NM60ND 650 V 0.13 25 A(1) 3 STP30NM60ND 25 A 1 2 D PAK STW30NM60ND 25 A 1. Limited only by maximum temperature allowed 3 2 3 T
9.15. Size:393K st
stp30nf20 stw30nf20 stb30nf20.pdf
STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W 3 3 2 2 STB30NF20 200V 0.075 30A 125W 1 1 TO-247 3 Gate charge minimized TO-220 1 100% avalanche tested D PAK Excellent figure of me
9.16. Size:355K inchange semiconductor
stb30nf20.pdf
isc N-Channel MOSFET Transistor STB30NF20 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
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