Справочник MOSFET. STB300NH02L

 

STB300NH02L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STB300NH02L
   Маркировка: B300NH02L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 24 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 109.4 nC
   trⓘ - Время нарастания: 275 ns
   Cossⓘ - Выходная емкость: 3251 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0018 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для STB300NH02L

 

 

STB300NH02L Datasheet (PDF)

 ..1. Size:332K  st
stb300nh02l stp300nh02l.pdf

STB300NH02L
STB300NH02L

STB300NH02LSTP300NH02LN-channel 24V - 120A - TO-220 / D2PAKSTripFET Power MOSFETPreliminary DataFeaturesType VDSS RDS(on) Max IDSTB300NH02L 24V

 9.1. Size:359K  st
stb30ns15.pdf

STB300NH02L
STB300NH02L

STB30NS15N-CHANNEL 150V - 0.075 - 30A D2PAKLOW GATE CHARGE STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTB30NS15 150 V

 9.2. Size:455K  st
stb30nf10.pdf

STB300NH02L
STB300NH02L

STB30NF10STP30NF10 STP30NF10FPN-CHANNEL 100V - 0.038 - 35A TO-220/TO-220FP/D2PAKLOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB30NF10 100 V

 9.3. Size:502K  st
stb30nf10 stp30nf10 stp30nf10fp.pdf

STB300NH02L
STB300NH02L

STB30NF10STP30NF10 - STP30NF10FPN-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB30NF10 100V

 9.4. Size:59K  st
stb3015l.pdf

STB300NH02L
STB300NH02L

STB3015LSTP3015LN - CHANNEL 30V - 0.013 - 40A - D2PAK/TO-220STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTB3015L 30 V

 9.5. Size:770K  st
stb30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf

STB300NH02L
STB300NH02L

STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V

 9.6. Size:386K  st
stp30nf20 stb30nf20 stw30nf20.pdf

STB300NH02L
STB300NH02L

STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me

 9.7. Size:847K  st
stb30nf20l.pdf

STB300NH02L
STB300NH02L

STB30NF20LN-channel 200 V, 0.065 , 30 A STripFET Power MOSFET in D2PAK packageDatasheet production dataFeaturesOrder code VDSS RDS(on) ID PTOTSTB30NF20L 200 V 0.075 30 A 150 WTAB Gate charge minimized 100% avalanche tested3 Excellent figure of merit (RDS* Qg)1 Very good manufacturing repeatabilityDPAK Very low intrinsic capacitanceApp

 9.8. Size:502K  st
stb30nf10t4 stb30nf10 stp30nf10 stp30nf10fp.pdf

STB300NH02L
STB300NH02L

STB30NF10STP30NF10 - STP30NF10FPN-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB30NF10 100V

 9.9. Size:67K  st
stb3020l.pdf

STB300NH02L
STB300NH02L

STB3020LSTP3020LN - CHANNEL 30V - 0.019 - 40A - D2PAK/TO-220STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTB3020L 30 V

 9.10. Size:618K  st
stb30nm50n sti30nm50n stf30nm50n stp30nm50n stw30nm50n.pdf

STB300NH02L
STB300NH02L

STB30NM50N,STI30NM50N,STF30NM50NSTP30NM50N, STW30NM50NN-channel 500 V, 0.090 , 27 A MDmesh II Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesRDS(on) VDSS Type ID(@Tjmax)max33121STB30NM50N 550 V

 9.11. Size:1205K  st
stb30n65m5 stf30n65m5 sti30n65m5 stp30n65m5 stw30n65m5.pdf

STB300NH02L
STB300NH02L

STB30N65M5, STF30N65M5, STI30N65M5STP30N65M5, STW30N65M5N-channel 650 V, 0.125 , 22 A, MDmesh V Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB30N65M5 710 V

 9.12. Size:766K  st
stb30nm60n sti30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf

STB300NH02L
STB300NH02L

STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V

 9.13. Size:43K  st
stb30n10-.pdf

STB300NH02L
STB300NH02L

STB30N10N - CHANNEL 100V - 0.06 - 30A - D2PAK POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTB30N10 100 V

 9.14. Size:792K  st
stw30nm60nd stp30nm60nd stf30nm60nd sti30nm60nd stb30nm60nd.pdf

STB300NH02L
STB300NH02L

STx30NM60NDN-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET(with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS @TJ RDS(on) Type IDmax max3322 2STB30NM60ND 25 AI PAK11TO-247STI30NM60ND 25 ASTF30NM60ND 650 V 0.13 25 A(1)3STP30NM60ND 25 A12D PAKSTW30NM60ND 25 A1. Limited only by maximum temperature allowed32 3 T

 9.15. Size:393K  st
stp30nf20 stw30nf20 stb30nf20.pdf

STB300NH02L
STB300NH02L

STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me

 9.16. Size:355K  inchange semiconductor
stb30nf20.pdf

STB300NH02L
STB300NH02L

isc N-Channel MOSFET Transistor STB30NF20FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

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